High-Temperature Erosion of SiC-NiCrAlY/Cr3C2-NiCr Coating

High Temperature Bipolar SiC Power Integrated Circuits

In the recent decade, integrated electronics implemented using wide bandgap semiconductor technologies such as Gallium Nitride (GaN) and Silicon Carbide (SiC) have been shown to be viable candidates in extreme environments (e.g high-temperature and high radiation). Such electronics have applications in down-hole drilling, automobile-, airand spaceindustries. In this thesis, integrated circuits ...

SiC protective coating for photovoltaic retinal prosthesis.

OBJECTIVE To evaluate plasma-enhanced, chemically vapor deposited (PECVD) amorphous silicon carbide (α-SiC:H) as a protective coating for retinal prostheses and other implantable devices, and to study their failure mechanisms in vivo. APPROACH Retinal prostheses were implanted in rats sub-retinally for up to 1 year. Degradation of implants was characterized by optical and scanning electron mi...

High Temperature Modeling and Characterization of 6H SiC MOSFETs

(Abstract) SiC offers the potential to provide high power, high temperature electronics. Our two-dimensional is used to model the current voltage characteristics of a 6H-SiC MOSFET as a function of temperature, from 25C to 200C. (Intro) In our previous paper[1], we developed a new detailed mobility model for Silicon Carbide (SiC) MOSFETs. The new model explicitly accounts for the contribution o...

High Temperature Power Electronics – Application Issues of SiC devices

High temperature operation capability of power devices enhances performance of the system especially in the automotive industry where weight and volume are critical factors. SiC devices are capable of operating at higher voltages, higher frequencies, and higher junction temperatures, which result in significant reduction in weight and size of the power converter and an increase in efficiency. I...

High temperature pulsed-gate robustness testing of SiC power MOSFETs